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STMicroelectronics

BD241C

Bipolar (BJT) Single Transistor, NPN, 100 V, 5 A, 40 W, TO-220, Through Hole

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Description

PNP Epitaxial Silicon Transistor, Medium Power Linear and Switching

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter Voltage : Vceo = 45 V

2. Emitter to Base Voltage : Vebo = 5 V

3. Collector Current : Ic = 3 A

4. Total Dissipation : Pc = 40 W

5. . Junction Temperature : Tj = 150°C

6. Storage Temperatue : Tsg = -65 ~ +150°C

Applications

• Complement to BD242 / BD242A / BD242B / BD242C respectively

Please enter the part number.

BDY55  |  BDY53

BDX93  |  BDX54C

BDX54A  |  BDX54

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