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Diodes Inc.
BC857BS-7-F
DIODES INC. - BC857BS-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 200 mW, -100 mA, 220 hFE
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Description

:

PNP double transistor in an SC-88; SOT363 plastic package. NPN complement: BC847BS.

Features

• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
• No mutual interference between the transistors.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 50 V

2. Collector to Emitter Voltage : Vceo = - 45 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 100 mA

5. Total Dissipation : Pc = 200 mW

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -55 ~ +150°C


Description

:

PNP double transistor in an SC-88; SOT363 plastic package. NPN complement: BC847BS.

Features

• Low collector capacitance
• Low collector-emitter saturation voltage
• Closely matched current gain
• Reduces number of components and boardspace
• No mutual interference between the transistors.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 50 V

2. Collector to Emitter Voltage : Vceo = - 45 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 100 mA

5. Total Dissipation : Pc = 200 mW

6. Junction Temperature : Tj = 150°C

 

7. Storage Temperatue : Tsg = -55 ~ +150°C



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