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Description

NPN Silicon Planar Epitaxial Transistor.

Suitable for applications requiring low noise and good hFElinearity, eg. audio pre-amplifiers, and instrumentation.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 30 V

2. Collector to Emitter Voltage : Vceo = 25 V

3. Emitter to Base Voltage : Vebo = 5 V

4. Collector Current : Ic = 0.2 A

5. Total Dissipation : Pd = 0.6 W

6. Junction Temperature : Tj = -65 ~ +150°C

7. Storage Temperatue : Tsg = -65 ~ +150°C