Description:50V, 12A, PNP epitaxial planar silicon transistor Features : 1. Low-saturation collector-to-emitter voltage :
Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage : Vcbo = - 60 V 2. Collector to Emitter Voltage : Vceo = - 50 V 3. Emitter to Base Voltage : Vebo = - 6 V 4. Collector Current : Ic = - 12 A 5. Total Dissipation : Pc = 40 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C
1. Relay drivers, high-speed inverters, converters, and other general high-current switching applications. |
Related Part Number |
B865 | B850XK6-6.0 B84143-A16-R | B826 B8220K6-6.0 | |