Description:Silicon PNP Triple Diffused Type Transistor.
Features : 1. Low Collector Saturation Voltage 2. Collector Metal (Fin) is Fully covered with Mold Resin
Pinouts :
1. Collector to Base Voltage : Vcbo = - 60 V 2. Collector to Emitter Voltage : Vceo = - 60 V 3. Emitter to Base Voltage : Vebo = - 7 V 4. Collector Current : Ic = - 4A 5. Total Dissipation : Pc = 2.0 W 6. Junction Temperature : Tj = 150°C 7. Storage Temperatue : Tsg = -55 ~ +150°C |
Related Part Number |
B1642 | B1548 B1436 | B140B B1399 | B1397 |