B1131 PDF Datasheet

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Description

:

PNP Epitaxial Planar Silicon Transistor

Features :

1. Adoption of FBET, MBIT processes.

2. Low saturation voltage.

3. Large current capacity.

4. Fast switching time.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 25 V

2. Collector to Emitter Voltage : Vceo = - 20 V

3. Emitter to Base Voltage : Vebo = - 5 V

4. Collector Current : Ic = - 5 A

5. Total Dissipation : Pc = 1 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications

1. High-Current Switching

2. Strobes, power supplies, relay drivers, lamp drivers.