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Description

The AT28C010-12TI, AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 200µA.

Features

• Fast Read Access Time – 120 ns

• Automatic Page Write Operation

 (1)  Internal Address and Data Latches for 128 Bytes

 (2) Internal Control Timer

• Fast Write Cycle Time

 (1) Page Write Cycle Time – 10 ms Maximum

 (2) 1 to 128-byte Page Write Operation

• Low Power Dissipation

 (1) 40 mA Active Current

 (2) 200 µA CMOS Standby Current