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Description

The ADG419-EP is a monolithic CMOS SPDT switch. This switch is fabricated on an enhanced LC2 MOS process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage current. The on resistance profile of the ADG419-EP is very flat over the full analog input range, ensuring excellent linearity and low distortion. The part also exhibits high switching speed and high signal bandwidth. CMOS construction ensures ultralow power dissipation, making the part ideally suited for portable and battery-powered instruments.

Features

1. 44 V supply maximum ratings
2. VSSto VDDanalog signal range
3. Low on resistance: <35 Ω
4. Ultralow power dissipation: <35 μW
5. Fast transition time: 145 ns maximum
6. Break-before-make switching action
7. Plug-in replacement for DG419
8. Supports defense and aerospace applications (AQEC standard)
9. Military temperature range: −55°C to +125°C
10. Controlled manufacturing baseline
11. One assembly/test site
12. One fabrication site
13. Enhanced product change notification
14. Qualification data available on request

Applications

1. Precision test equipment
2. Precision instrumentation
3. Battery-powered systems
4. Sample-and-hold systems

SINGLE SUPPLY
VDD= 12 V ± 10%, VSS= 0 V, VL= 5 V ± 10%, GND = 0 V, unless otherwise noted.

DUAL SUPPLY
VDD= 15 V ± 10%, VSS= −15 V ± 10%, VL= 5 V ± 10%, GND = 0 V, unless otherwise noted.

Official Homepage :  https://www.analog.com/en/products/adg419.html