PDF A1850 Download

Description

1. Adoption of FBET process.

2. High Gain Bandwidth product (fT=400MHz).

3. High breakdown voltage (VCEO=120V).

4. Small reverse transfer capacitance and excellent high-frequency characteristic :
  Cre =1.7pF/NPN, 2.2pF/PNP.

5. Usage of radial taping to meet automatic mounting.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = - 120 V

2. Collector to Emitter Voltage : Vceo = - 120 V

3. Emitter to Base Voltage : Vebo = - 3 V

4. Collector Current : Ic = - 200 mA

5. Total Dissipation : Pc = 1.3 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications :

1. High Definition CRT Display Video Output