Description:This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. 1. 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V 2. Low gate charge ( typical 28 nC) 3. Low Crss ( typical 24 pF) 4. Fast switching 5. 100% avalanche tested 6. Improved dv/dt capabilit |
Related Part Number |
9N50C | |