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Description

•  Enhancement mode type
•  High speed: tf= 0.30 μs (typ.) (IC= 60 A)
•  Low saturation voltage: VCE (sat)= 1.55 V (typ.) (IC= 60 A)

Maximum Ratings (Ta = 25°C)

1. Collector-emitter voltage : VCES = 600 V

2. Gate-emitter voltage : VGES = +- 25 V

3. Collector current : Ic = 60 A

4. Collector power dissipation = Pc = 200 W

Applications :

Fourth Generation IGBT, Soft Switching