PDF 4N38M Download

Description

The 4N38M, H11DXM and MOC8204M are photo transistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Features

1. High voltage:
– MOC8204M, BVCER= 400V
– H11D1M, H11D2M, BVCER= 300V
– H11D3M, BVCER= 200V

2. High isolation voltage:
– 7500 VACpeak, 1 second

3. Underwriters Laboratory (UL) recognized File # E90700, Volume 2
4. IEC 60747-5-2 approved (ordering option V)

Applications

1. Power supply regulators
2. Digital logic inputs
3. Microprocessor inputs
4. Appliance sensor systems
5. Industrial controls