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Description

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY

3DD2553 is high breakdown voltage of NPN bipolar transistor.

The main process of manufacture :

1. high voltage mesa type process, riple diffused process etc., adoption of fully plastic packge.
RoHS product.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1700 V

2. Collector to Emitter Voltage : Vceo = 600 V

3. Emitter to Base Voltage : Vebo = 6 V

4. Collector Current : Ic = 8 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C 

Applications :

1. Horizontal deflection output for color TV. 

Absolute maximum ratings