PDF 2SK3919 Download
Renesas
2SK3919-S15-AZ
Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
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| Win Source | 9,280 | Visit Site | |||
| Best Source | 6,012 | 1.1549 | Visit Site | ||
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Description:The 2SK3919 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 25 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 64 A
4. Drain power dissipation : PD = 1 W
5. Single pulse avalanche energy : Eas = 73 mJ
6. Avalanche current : Iar = 27 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = -55 to +150 °C
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Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |
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