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Description

The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 20 V

3. Total Power Dissipation : Pt = 1 W

4. Channel temperature : Tch =  150 °C

5. Storage temperature : Tstg = -55 to +150 °C