Description:Silicon N Channel MOSFET
1. Low on-resistance RDS(on)= 4 mΩ typ.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 60 A
4. Channel dissipation : Pch = 35 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications : 1. High Speed Power Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |