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2SK3142-VB
N¡ªchannel, 30V, 140A, Rds(on), 3M¦¸@10V, 3.5M¦¸@4.5V, 20VGS(¡ÀV), 1~3VTH(V) , TO220F
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Description

:

Silicon N Channel MOSFET 


Features : 

1.  Low on-resistance RDS(on)= 4 mΩ typ.

2.  Low drive current

3.  4 V gate drive device can be driven from 5 V source


Absolute Maximum Ratings (Ta = 25°C)
 
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 60 A
4. Channel dissipation : Pch = 35 W
5. Channel temperature : Tch =  150 °C
6. Storage temperature : Tstg = -55 to +150 °C




Applications : 

1. High Speed Power Switching


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Related Part Number


2SV-09  |  2SK950  

2SK94  |  2SK82  

2SK59  |  2SK43  


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