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Description

•  Low on-resistance RDS(on)= 4 mΩtyp.

•  Low drive current

•  4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 75 A

4. Channel dissipation : Pch =  100 W

7. Avalanche energy : Ear = 122 mJ

8. Channel temperature : Tch =  150 °C

9. Storage temperature : Tstg = -55 to +150 °C

Applications :

High Speed Power Switching