2SK2980 PDF Datasheet

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Description

:

Silicon N Channel MOSFET

Features :

• Low on-resistance
RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA)

• 2.5V gate drive devices.

• Small package (MPAK)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 12 V

3. Drain current : ID = 1 A

4. Channel dissipation : Pch = 0.8 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. High Speed Power Switching