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Description

Silicon N Channel MOSFET 

Features :

•  Low on-resistance :  RDS(on)= 0.09Ω typ. (Vgs = 4 V, ID= 1.5 A)

•  Low drive current

•  High speed switching

•  2.5V gate drive devices.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 10 V

3. Drain current : ID = 2.5 A

4. Channel dissipation : Pch = 1 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

High Speed Power Switching