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Description

1.  Low on-resistance RDS(on)= 7mW typ.

2.  4V gate drive devices. 

3.  High speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 50 A

4. Channel dissipation : Pch = 75 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

1. High Speed Power Switching