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2SK2956

Power Field-Effect Transistor, 50A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Description

:

Silicon N Channel MOSFET

Features :

• Low on-resistance RDS(on)= 7 mΩtyp.

• 4 V gate drive devices.

• High speed switching

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 50 A

4. Channel dissipation : Pch = 35 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. High Speed Power Switching

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