Description:Silicon N Channel MOSFET Features : • Low on-resistance : RDS(on)= 0.040Ω typ.
Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 15 A
4. Channel dissipation : Pch = 25 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications : 1. High Speed Power Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |