2SK2925S PDF Datasheet

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Description

:

Silicon N Channel MOSFET

Features :

• Low on-resistance RDS=0.060 Ωtyp.

• High speed switching

• 4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 10 A

4. Channel dissipation : Pch = 20 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. High Speed Power Switching