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Description

:

N-Channel enhancement mode Power MOSFET

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 200 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 18 A

4. Maximum Power Dissipation : Pd = 50 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

1. For Switching



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