Description:N-Channel enhancement mode Power MOSFET Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 200 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 18 A 4. Maximum Power Dissipation : Pd = 50 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C Applications : 1. For Switching |
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2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |