Description:Silicon N Channel MOSFET Features : 1. Low on-resistance 2. High speed switching 3. Low drive current 4. No secondary breakdown 5. Suitable for switching regulator and DC–DC converter 6. Avalanche ratings Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 700 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 12 A 4. Channel dissipation : Pch = 175 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C
1. High Speed Power Switching / Vdss = 700V |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |