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Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Low On-Resistance

 (1) RDS(on)1 = 27 mW Max. (VGS = 10 V, ID = 18 A)

 (2) RDS(on)2 = 40 mW Max. (VGS = 4 V, ID = 18 A)

• Low Ciss Ciss =1 200 pF Typ.

• Built-in G-S Protection Diode

• Isolated TO-220 package

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = ± 35 A

4. Total Power Dissipation : Pt = 2 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C