2SK2570 PDF Datasheet

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Description

:

Silicon N-Channel MOSFET

Features :

• Low on-resistance
RDS(on)= 0. 8Ω typ. (V GS= 4 V, ID= 100 mA)

• 2.5V gate drive devices.

• Small package (MPAK)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 10 V

3. Drain current : ID = 0.2 A

4. Channel dissipation : Pch = 150 mW

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

1. Low Frequency Power Switching