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Description

The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Features

• Low on-state resistance : 
  (1) RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A)
   (2) RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A)

• Low Ciss: Ciss = 570 pF TYP.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 8 A

4. Total Power Dissipation : Pd = 1 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C