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Description

The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.

Features : 

• Low On-Resistance
  RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 10 A)
  RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 10 A)

• Low CissCiss= 860 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 20 A

4. Total Power Dissipation : Pt = 2 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C