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Description

•  Low on-resistance
•  Small package
•  Low drive current
•  4 V gate drive device can be driven from 5 V source.
•  Suitable for low signal load switch

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 0.2 A

4. Channel dissipation : Pch =  150 mW

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Application : 

High speed power switching