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VBsemi
2SK2318.-VB
N, 30V, 70A, Rds(on), 6M¦¸@10V, 8M¦¸@4.5V, 20VGS(¡ÀV), 1.92VTH(V) , TO251
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Description

:

N-channel Silicon MOSFET


Features : 

1. Low ON Resistance.

2. Very high-speed switching.

3. 2.5V drive.


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 10 V

3. Drain current : ID = 12 A 

4. Allowable Power Dissipation : Pd = 30 W

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications :

1. Very High-Speed Switching  



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Related Part Number


2SV-09  |  2SK950  

2SK94  |  2SK82  

2SK59  |  2SK43  


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