Description:Silicon N-Channel MOSFET Features : 1. High breakdown voltage (VDSS= 1500 V) Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 1500 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 2 A 4. Channel dissipation : Pch = 50 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C
Application :
1. High speed power switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |