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2SK2154-TL-E
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Description

:

N-Channel MOS Silicon FET 

Features : 

1. Low ON resistance.

2. Very high-speed switching.

3. Low-voltage drive.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 20 V

2. Gate to source voltage : VGSS = ± 18 V

3. Drain current : ID = 12 A

4. Allowable Power Dissipation : Pd = 30 W

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C

 

Applicatins :

1. Very High-Speed Switching



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