Description:N-Channel MOS Silicon FET Features : 1. Low ON resistance. 2. Very high-speed switching. 3. Low-voltage drive. Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 20 V 2. Gate to source voltage : VGSS = ± 18 V 3. Drain current : ID = 12 A 4. Allowable Power Dissipation : Pd = 30 W 5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applicatins : 1. Very High-Speed Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |