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2SK2096
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Description

:

Silicon N-Channel MOSFET

Features : 

•  Low on-resistance
•  High speed switching
•  Low drive current
•  4 V gate drive device can be driven from 5 V source
•  Suitable for switching regulator, DC-DC converter
•  Avalanche ratings


Absolute Maximum Ratings (Ta = 25°C)
 
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 45 V
4. Channel dissipation : Pch = 100 W
5. Channel temperature : Tch =  150 °C
6. Storage temperature : Tstg = -55 to +150 °C



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