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Description

:

Silicon N-Channel MOSFET

Features : 

•  Low on-resistance

•  High speed switching

•  Low drive current

•  4 V gate drive device can be driven from 5 V source

•  Suitable for Switching regulator, DC - DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 100 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 1 A

4. Channel dissipation : Pch = 0.9 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C





Application :

 

1. High speed power switching



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