PDF 2SK2008 Download

Description

Silicon N Channel MOSFET

Features

•  Low on-resistance
•  High speed switching
•  Low drive current
•  No Secondary Breakdown
•  Suitable for Switching regulator, DC - DC converter, motor control

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 250 V

2. Gate to source voltage : VGSS = ± 30 V 

3. Drain current : ID = 20 A 

4. Drain power dissipation : PD = 60 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Application

: High speed power switching