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PDF 2SK1905 Download

VBsemi
2SK1905-VB
N, 100V, 18A, Rds(on), 100M¦¸@10V, 120M¦¸@4.5V, 20VGS(¡ÀV), 2~4VTH(V) , TO220F, -
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Description

:

N-Channel Silicon MOSFET

Features :

1. Low ON resistance.

2. Ultrahigh-speed switching.

3. Low-voltage drive.

4. Micaless package facilitating easy mounting.


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 100 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 12 A

4. Allowable Power Dissipation : Pd = 2 W

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C



 

Applications :

1. Ultrahigh-Speed Switching 



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Related Part Number


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2SK59  |  2SK43  


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