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Description

Silicon N-Channel MOSFET

Features :

1. Low on-resistance

2. High speed switching

3. Low drive current

4. No secondary breakdown

5. Suitable for switchingregulator, DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 4 A

4. Channel temperature : Tch =  150 °C

5. Storage temperature : Tstg = -55 to +150 °C