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Description

:

N-Channel Silicon MOSFET

 

Features :

· Low ON resistance.

· Ultrahigh-speed switching.

· Low-voltage drive.

· Its height onboard is 9.5mm.

· Meets radial taping.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V

2. Gate to source voltage : VGSS = ± 15 V

3. Drain current : ID = 2.5 A

4. Allowable Power Dissipation : Pd = 1.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C


Applications :

1. Ultrahigh-Speed Switching 



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Related Part Number


2SV-09  |  2SK950  

2SK94  |  2SK82  

2SK59  |  2SK43  


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