Description:N-Channel Silicon MOSFET
Features : · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 60 V 2. Gate to source voltage : VGSS = ± 15 V 3. Drain current : ID = 2.5 A 4. Allowable Power Dissipation : Pd = 1.5 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C
1. Ultrahigh-Speed Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |