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2SK1521-E1-E#T2
Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Description

:

Silicon N Channel MOSFET

Features : 

•  Low on-resistance

•  High speed switching

•  Low drive current

•  Built-in fast recovery diode (trr = 120 ns)

•  Suitable for motor control, switching regulator, DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 450 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 50 A

4. Channel dissipation : Pch = 250 W

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C



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