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NEC
2SK1492
Power Field-Effect Transistor, 35A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Description

:

The 2SK1492 is N-channel MOS Field Effect Transistor designed for high voltage switching applications.

Features : 

1. Low On-state Resistance

2. Low Ciss = 3,000 pF

3. Built-in G-S gate Protection Diodes

4. High Avalanche Capability Ratings

 


Absolute Maximum Ratings (Ta = 25°C)
 
1. Drain to source voltage : VDSS = 250 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 35 A
4. Total Power Dissipation : Pd = 140 W
5. Channel temperature : Tch =  150 °C
6. Storage temperature : Tstg = -55 to +150 °C



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Related Part Number


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2SK94  |  2SK82  

2SK59  |  2SK43  


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