Description:The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. • Low on-state resistance RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A) RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A) • Voltage drive at logic level (VGS = 4 V) is possible. • Bidirectional zener diode for protection is incorporated in between the gate and the source. • Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source.
• Can be used complementary with the 2SJ196. Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 1.5 A
4. Total Power Dissipation : Pd = 750 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |