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PDF 2SK1482 Download

NEC
2SK1482-T-AZ
Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Description

:

The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply.

The device featuring low on-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.

Features : 

• Low on-state resistance

RDS(on)1 = 0.8 Ω MAX. (VGS = 4 V, ID = 0.5 A)

RDS(on)2 = 0.4 Ω MAX. (VGS = 10 V, ID = 0.5 A)

• Voltage drive at logic level (VGS = 4 V) is possible.

• Bidirectional zener diode for protection is incorporated in

between the gate and the source.

• Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the drain and source.

 

• Can be used complementary with the 2SJ196.


Absolute Maximum Ratings (Ta = 25°C)
 
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 1.5 A
4. Total Power Dissipation : Pd = 750 W
5. Channel temperature : Tch =  150 °C
6. Storage temperature : Tstg = -55 to +150 °C



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Related Part Number


2SV-09  |  2SK950  

2SK94  |  2SK82  

2SK59  |  2SK43  


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