Description:Silicon N-Channel MOSFET 1. Low ON resistance 2. Very high-speed switching 3. Low-Voltage drive. Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 30 V 2. Gate to source voltage : VGSS = ± 15 V 3. Drain current : ID = 2 A 4. Drain power dissipation : PD = 1.5 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C
Very High-Speed Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |