Description:N-Channel Silicon MOSFET
1. Low ON-state resistance.
1. Drain to source voltage : VDSS = 450 V 2. Gate to source voltage : VGSS = ± 30 V 3. Drain current : ID = 10 A 4. Allowable Power Dissipation : Pd = 3 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C
Applications : Ultrahigh-Speed Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |