Description:N-Channel Silicon MOSFET Features : 1. Low ON-state resistance. Absolute Maximum Ratings (Ta = 25°C) 1. Drain to source voltage : VDSS = 100 V 2. Gate to source voltage : VGSS = ± 20 V 3. Drain current : ID = 25 A 4. Allowable Power Dissipation : Pd = 2 W 5. Channel temperature : Tch = 150 °C 6. Storage temperature : Tstg = -55 to +150 °C Applications : 1. Ultrahigh-Speed Switching |
Related Part Number |
2SV-09 | 2SK950 2SK94 | 2SK82 2SK59 | 2SK43 |