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Description

Silicon N-channel MOSFET

Features :

1. Low ON resistance, low input capacitance, Ultrahigh-speed switching.

2. High reliability (Adoption of HVP process).

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 1500 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = 6 A

4. Channel dissipation : Pch = 3.5 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

Ultrahigh-Speed Switching