2SK134 PDF Datasheet

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Description

:

Silicon N-channel MOSFET

Featues :

1. High Power Gain

2. Excellent Frequency Response

3. High Speed Switching

4. Wide Area of Safe Operation.

Pinouts :

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 140 V

2. Gate to source voltage : VGSS = ± 14 V

3. Drain current : ID = 7 A

4. Channel dissipation : Pch = 100 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications :

Low frequency power amplifier (-140V drain-source breakdown voltage)