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Description

Silicon N-Channel MOSFET

Features : 

•  Low on-resistance
•  High speed switching
•  Low drive current
•  No secondary breakdown
•  Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 3 A

4. Drain power dissipation : PD = 80 W

5. Channel temperature : Tch =  150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Applications : 

High speed power switching