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2SK1328
Power Field-Effect Transistor, 12A I(D), 0.55ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET
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Description

:

Silicon N-Channel MOSFET

Features : 

•  Low on-resistance

•  High speed switching

•  Low drive current

•  No secondary breakdown

•  Suitable for switching regulator and DC-DC converter


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 450 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID =  12 A

4. Channel dissipation : Pch = 60 W

5. Channel temperature : Tch =  150 °C

 

6. Storage temperature : Tstg = -55 to +150 °C





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