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2SK1164

Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Description

:

Silicon N-Channel MOSFET

Features :

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 11 A

4. Channel dissipation : Pch = 100 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

Please enter the part number.

2SV-09  |  2SK950

2SK94  |  2SK82

2SK59  |  2SK43

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